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| SOT323 NPN SILICON PLANAR HIGH PERFORMANCE TRANSISTOR ISSUE 2 - MARCH 2007 FEATURES * Extremely low saturation voltage * 500mW power dissipation * 1 Amp continuous collector current (IC) APPLICATIONS * Ideally suited for space / weight critical applications ZUMT491 C E B SOT323 ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Peak Pulse Current Continuous Collector Current Base Current Power Dissipation at T amb =25C Operating and Storage Temperature Range SYMBOL V CBO V CEO V EBO I CM IC IB P tot T j :T stg VALUE 80 60 5 2 1 200 500 -55 to +150 UNIT V V V A A mA mW C ELECTRICAL CHARACTERISTICS (at Tamb = 25C). PARAMETER Collector Base Breakdown Voltage Collector Emitter Breakdown Voltage Emitter Base Breakdown Voltage Collector Cut Off Current Collector Cut Off Current Emitter Cut Off Current Collector Emitter Saturation Voltage Base Emitter Saturation Voltage Base Emitter Turn On Voltage SYMBOL V (BR)CBO V CEO(sus) V (BR)EBO I CBO I CES I EBO V CE(sat) V BE(sat) V BE(on) MIN. 80 60 5 100 100 100 0.25 0.50 1.1 1.0 TYP. MAX. UNIT V V V nA nA nA V V V V CONDITIONS. I C =100A, I E =0 I C =10mA*, I B =0 I E =100A, I C =0 V CB =60V VCE=60V V EB =4V, I C =0 I C =500mA, I B =50mA* I C =1A, I B =100mA* I C =1A, I B =100mA* IC=1A, V CE =5V* * Measured under pulsed conditions. Pulse width 300S. Duty cycle 2%. |
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